2008. 9 .11 1/2 semiconductor technical data PG08HSUSC revision no : 2 protection in portable electronics applications. features ? 350 watts peak pulse power (tp=8/20 s) ? transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 21a(tp=8/20 s) ? small package for use in portable electronics. ? suitable replacement for multi-layer varistors in esd protection applications. ? protects on i/o or power line. ? low clamping voltage. ? low leakage current. applications ? cell phone handsets and accessories. ? microprocessor based equipment. ? personal digital assistants (pda?s) ? notebooks, desktops, & servers. ? portable instrumentation. ? pagers peripherals. maximum rating (ta=25 ? ) usc dim millimeters a b c d e f g h j k 2.50 0.1 1.25 0.05 0.90 0.05 0.30+0.06/-0.04 1.70 0.05 min 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 l m4~6 i 1.0 max cathode mark m m i c j g d 2 1 b 1. anode 2. cathode e k a f h l + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 350 w peak pulse current (tp=8/20 s) i pp 21 a operating temperature t j -55 ?- 150 ? storage temperature t stg -55 ?- 150 ? marking cathode mark 21 21 8h type name lot no. single line tvs diode for esd protection in portable electronics characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 8 v reverse breakdown voltage v br i t =1ma 8.5 - - v reverse leakage current i r v rwm =8v - - 10 a clamping voltage v c i pp =5a, tp=8/20 s - - 13.5 v i pp =21a, tp=8/20 s - - 16.9 junction capacitance c j v r =0v, f=1mhz - - 250 pf
2008 .9 11 2/2 PG08HSUSC revision no : 2 non-repetitive peak pulse power vs. pulse time pulse duration tp ( s) 0.1 1 100 10 pp peak pulse power p (kw) 1k 0.01 0.1 1 10 capacitance c (pf) 0 j 2 0 reverse voltage v (volts) c - v r peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 r j 6 48 100 200 300 400 rated power or i (%) 0 pp 110 70 50 25 0 ambient temperature ta ( c) power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 peak pulse current i (%) 0 pp 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60
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